自1958年集成電路誕生以來，硅基集成芯片制造技術(shù)迅速發(fā)展，現(xiàn)今已經(jīng)進(jìn)入亞5nm時(shí)代。硅基芯片制造技術(shù)可以概括為一系列微細(xì)加工硅片技術(shù)，這些愈益精密的微細(xì)加工技術(shù)持續(xù)創(chuàng)新與升級，源于20世紀(jì)初以來現(xiàn)代物理等物質(zhì)科學(xué)知識的長期積累。充分了解各種微細(xì)加工技術(shù)背后的科學(xué)原理，是理解和掌握集成芯片制造工藝技術(shù)的基礎(chǔ)。 全書共20章。前8章概述硅基集成芯片從小規(guī)模到極大規(guī)模集成的創(chuàng)新演進(jìn)路徑，分析集成芯片制造技術(shù)快速升級換代的獨(dú)特規(guī)律，研判器件微小型化技術(shù)與摩爾規(guī)律的內(nèi)在聯(lián)系，并對半導(dǎo)體物理和晶體管原理基礎(chǔ)理論知識作概要討論。后12章分別闡述熱氧化、硅單晶與外延生長及SOI晶片、精密圖形光刻、擴(kuò)散摻雜、離子注入與快速退火、PVD與CVD及ALD薄膜淀積、高密度等離子體刻蝕、金屬硅化物自對準(zhǔn)接觸和多層金屬互連等多種集成芯片微細(xì)加工關(guān)鍵技術(shù)，著力分析討論各種微細(xì)加工技術(shù)的物理、化學(xué)基礎(chǔ)原理與規(guī)律，其間對制造工藝中廣泛應(yīng)用的真空技術(shù)與等離子體技術(shù)作概要介紹。本書特別關(guān)注進(jìn)入21世紀(jì)以來正在發(fā)展的集成芯片制造技術(shù)的新結(jié)構(gòu)、新材料、新工藝和新趨勢，介紹包括高密度超微立體晶體管和納米CMOS等集成器件的典型結(jié)構(gòu)與制造工藝。 Abstract This book focuses on the Si micro-fabrication technology. Since the invention of integrated circuits (IC) in 1958, the Si micro-fabrication technology has been developing rapidly thanks to the advances in modern physics and other fundamental sciences from the beginning of the 20th century. Fully understanding the scientific principles underlying the various micro-fabrication technologies is the basis for studying and mastering the Si IC chip process technology. This book consists of 20 chapters. The first 8 chapters outline the evolution and innovation of the CMOS and bipolar IC process technology over the past six decades, analyze the unique law of Si IC micro-fabrication technology evolution, discuss the relationship between the scaling-down principle and the Moore’s Law, and review the basic theories of semiconductor physics and transistors. The following 12 chapters elaborate on such key process technologies of Si IC chips as thermal oxidation, Si epitaxial growth and SOI material, lithography, dopant diffusion, ion implant and RTA, PVD/CVD/ALD thin films, high density plasma etching, salicide contact and multi-level interconnection. The physical and chemical principles underlying the micro-fabrication technology are analyzed and discussed for better understanding. Besides, more attention is paid to the fabrication technology of nano-CMOS chips with new structures and materials.