1 Electrons, Photons, and Phonons 電子、光子和聲子 1.1 Selected Concepts of Quantum Mechanics 量子力學(xué)的基本概念 1.1.1 The dual nature of the photon 光子的二重性 1.1.2 The dual nature of the electron 電子的二重性 1.1.3 Electrons in confined environments 密閉環(huán)境中的電子特性 1.2 Selected Concepts of Statistical Mechanics 統(tǒng)計力學(xué)的基本概念 1.2.1 Thermal motion and thermal energy 熱運動和熱能 1.2.2 Thermal equilibrium 熱平衡 1.2.3 Electron statistics 電子統(tǒng)計特性 1.3 Selected Concepts of Solid-State Physics 固體物理的基本概念 1.3.1 Bonds and bands 化學(xué)鍵和能帶 1.3.2 Metals, insulators, and semiconductors 金屬、絕緣體和半導(dǎo)體 1.3.3 Density of states 態(tài)密度 1.3.4 Lattice vibrations: phonons 晶格振動：聲子 1.4 Summary 小結(jié) 1.5 Further reading 延展閱讀 Problems 習(xí)題 2 Carrier Statistics in Equilibrium 平衡狀態(tài)下的載流子統(tǒng)計特性 2.1 Conduction and Valence Bands; Bandgap; Holes 導(dǎo)帶和價帶，帶隙，空穴 2.2 Intrinsic Semiconductor 本征半導(dǎo)體 2.3 Extrinsic Semiconductor 非本征半導(dǎo)體 2.3.1 Donors and acceptors 施主和受主 2.3.2 Charge neutrality 電中性特點 2.3.3 Equilibrium carrier concentration in a doped semiconductor 摻雜半導(dǎo)體中的平衡載流子濃度 2.4 Carrier Statistics in Equilibrium 平衡狀態(tài)下的載流子統(tǒng)計特性 2.4.1 Conduction and valence band density of states 導(dǎo)帶和價帶的態(tài)密度 2.4.2 Equilibrium electron concentration 平衡電子濃度 2.4.3 Equilibrium hole concentration 平衡空穴濃度 2.4.4 np product in equilibrium 平衡狀態(tài)下的np積 2.4.5 Location of Fermi level 費米能級的位置 2.5 Summary 小結(jié) 2.6 Further Reading 延展閱讀 AT2.1 Temperature Dependence of the Bandgap 帶隙的溫度依存性 AT2.2 Selected Properties of the Fermi-Dirac Integral 費米–狄拉克積分的基本特性 AT2.3 Approximations for Strongly Degenerate Semiconductor 強簡并半導(dǎo)體的數(shù)學(xué)近似 AT2.4 Statistics of Donor and Acceptor Ionization 施主和受主電離的數(shù)學(xué)統(tǒng)計 AT2.5 Carrier Freeze-Out 載流子束縛態(tài) AT2.6 Heavy-Doping Effects 重?fù)诫s效應(yīng) AT2.6.1 The Mott transition Mott轉(zhuǎn)移 AT2.6.2 Bandgap narrowing 帶隙變窄 Problems 習(xí)題 3 Carrier Generation and Recombination 載流子的產(chǎn)生與復(fù)合 3.1 Generation and Recombination Mechanisms 產(chǎn)生與復(fù)合機制 3.2 Thermal Equilibrium: Principle of Detailed Balance 熱平衡：精細(xì)平衡原理 3.3 Generation and Recombination Rates in Thermal Equilibrium 熱平衡下的產(chǎn)生率與復(fù)合率 3.3.1 Band-to-band optical generation and recombination 帶間光產(chǎn)生和光復(fù)合 3.3.2 Auger generation and recombination 俄歇產(chǎn)生與復(fù)合 3.3.3 Trap-assisted thermal generation and recombination 陷阱輔助的熱產(chǎn)生與復(fù)合 3.4 Generation and Recombination Rates Outside Equilibrium 非平衡條件下的產(chǎn)生與復(fù)合 3.4.1 Quasi-neutral low-level injection; recombination lifetime 準(zhǔn)中性低濃度注入，復(fù)合壽命 3.4.2 Extraction; generation lifetime 提取和產(chǎn)生壽命 3.5 Dynamics of Excess Carriers in Uniform Situations 均勻條件下的過剩載流子動力學(xué) 3.5.1 Example 1: Turn-on transient 例1：開瞬態(tài) 3.5.2 Example 2: Turn-off transient 例2：關(guān)瞬態(tài) 3.5.3 Example 3: A pulse of light 例3：一個光脈沖 3.6 Surface Generation and Recombination 表面產(chǎn)生與復(fù)合 3.7 Summary 小結(jié) 3.8 Further Reading 延展閱讀 AT3.1 Shockley–Read–Hall Model 肖克利–里德–霍爾模型 AT3.1.1 Recombination lifetime 復(fù)合壽命 AT3.1.2 Generation lifetime 產(chǎn)生壽命 AT3.2 High-Level Injection 高濃度注入 Problems 習(xí)題 4 Carrier Drift and Diffusion 載流子的漂移和擴散 4.1 Thermal Motion 熱運動 4.1.1 Thermal velocity 熱運動速率 4.1.2 Scattering 散射 4.2 Drift 漂移 4.2.1 Drift velocity 漂移速率 4.2.2 Velocity saturation 速率飽和 4.2.3 Drift current 漂移電流 4.2.4 Energy band diagram under electric field 電場作用下的能帶圖 4.3 Diffusion 擴散 4.3.1 Fick’s first law 菲克第一定律 4.3.2 The Einstein relation 愛因斯坦關(guān)系 4.3.3 Diffusion current 擴散電流 4.4 Transit Time 渡越時間 4.5 Nonuniformly Doped Semiconductor in Thermal Equilibrium 熱平衡下的非均勻摻雜半導(dǎo)體 4.5.1 Gauss’law 高斯定律 4.5.2 The Boltzmann relations 玻爾茲曼關(guān)系 4.5.3 Equilibrium carrier concentration 平衡載流子濃度 4.6 Quasi-Fermi Levels and Quasi-Equilibrium 準(zhǔn)費米能級與準(zhǔn)平衡態(tài) 4.7 Summary 小結(jié) 4.8 Further Reading 延展閱讀 AT4.1 Selected Properties of the Gamma Function 伽馬函數(shù)的基本性質(zhì) AT4.2 Hot Carrier Effects 熱載流子效應(yīng) AT4.2.1 Energy relaxation versus momentum relaxation 能量弛豫和動量弛豫 AT4.2.2 Hot-electron transport 熱電子輸運 AT4.2.3 Impact ionization 碰撞電離 Problems 習(xí)題 5 Carrier Flow 載流子運動 5.1 Continuity Equations 連續(xù)性方程 5.2 Surface Continuity Equations 表面連續(xù)性方程 5.2.1 Free surface 自由表面 5.2.2 Ohmic contact 歐姆接觸 5.3 Shockley Equations 肖克利公式 5.4 Simplifications of Shockley Equations to One-Dimensional Quasi-Neutral Situations 一維準(zhǔn)中性條件下的肖克利公式簡化 5.5 Majority Carrier Situations 多數(shù)載流子 5.5.1 Example 1: Semiconductor bar under voltage 例1：電壓下的半導(dǎo)體棒 5.5.2 Example 2: Integrated resistor 例2：集成電阻 5.6 Minority Carrier Situations 少數(shù)載流子 5.6.1 Example 3: Diffusion and bulk recombination in a “l(fā)ong” bar 例3：“長”棒中的擴散和體復(fù)合 5.6.2 Example 4: Diffusion and surface recombination in a “short” bar 例4：“短”棒中的擴散和表面復(fù)合 5.6.3 Length scales of minority carrier situations 少數(shù)載流子的長度效應(yīng) 5.7 Dynamics of Majority Carrier Situations 多數(shù)載流子的動力學(xué)特性 5.8 Dynamics of Minority Carrier Situations 少數(shù)載流子的動力學(xué)特性 5.8.1 Example 5: Transient in a bar with S=∞ 例5：S=∞時，半導(dǎo)體棒的瞬態(tài)特性 5.9 Transport in Space-Charge and High-Resistivity Regions 空間電荷和高阻區(qū)中的輸運 5.9.1 Example 6: Drift in a high-resistivity region under external electric field 例6：外電場作用下的高阻區(qū)漂移 5.9.2 Comparison between SCR and QNR transport 空間電荷區(qū)（SCR）與準(zhǔn)中性區(qū)（QNR）輸運的比較 5.10 Carrier Multiplication and Avalanche Breakdown 載流子倍增和雪崩擊穿 5.10.1 Example 7: Carrier multiplication in a high-resistivity region with uniform electric field 例7：均勻電場作用下的高阻區(qū)載流子倍增 5.11 Summary 小結(jié) 5.12 Further Reading 延展閱讀 AT5.1 Continuity Equations in Integral Form 積分形式的連續(xù)方程 AT5.2 Dielectric Relaxation 介電弛豫 AT5.3 Advanced Topics Regarding Minority Carrier Situations 少數(shù)載流子條件下的復(fù)雜難題 AT5.3.1 Advanced Example 1: Diffusion, drift, and recombination in a short bar with internal field 難題示例1：內(nèi)電場作用下的短棒半導(dǎo)體中的載流子漂移、擴散和復(fù)合 AT5.3.2 More on length scales of minority carrier situations 少數(shù)載流子條件下的長度效應(yīng) AT5.3.3 Advanced Example 2: Transient in a bar with finite surface recombination 難題示例2：有限表面復(fù)合下的棒狀半導(dǎo)體瞬態(tài)特性 AT5.4 Carrier Multiplication and Avalanche Breakdown Under Nonuniform Electric Field 非均勻電場作用下的載流子倍增和雪崩擊穿 Problems 習(xí)題 6 PN Junction Diode pn結(jié)二極管 6.1 The Ideal PN Junction Diode 理想pn結(jié)二極管 6.2 Ideal PN Junction in Thermal Equilibrium 熱平衡下的理想pn結(jié)二極管 6.3 Current–Voltage Characteristics of the Ideal PN Diode 理想pn結(jié)二極管的電流–電壓特性 6.3.1 Electrostatics under bias 偏置電壓作用下的靜電學(xué)特性 6.3.2 I-V characteristics: qualitative discussion I-V 特性：定性討論 6.3.3 I-V characteristics: quantitative models I-V 特性：定量模型 6.4 Charge–Voltage Characteristics of Ideal PN Diode 理想pn結(jié)二極管的電荷–電壓特性 6.4.1 Depletion charge 耗盡電荷 6.4.2 Minority carrier charge 少數(shù)載流子電荷 6.5 Equivalent Circuit Models of the Ideal PN Diode 理想pn結(jié)二極管的等效電路模型 6.6 Nonideal and Second-Order Effects 非理想條件和二階效應(yīng) 6.6.1 Short diode 短二極管 6.6.2 Space-charge generation and recombination 空間電荷的產(chǎn)生與復(fù)合 6.6.3 Series resistance 串聯(lián)電阻 6.6.4 Breakdown voltage 擊穿電壓 6.6.5 Nonuniform doping distributions 非均勻摻雜分布 6.6.6 High-injection effects 高注入效應(yīng) 6.7 Integrated PN Diode 集成pn結(jié)二極管 6.7.1 Isolation 隔離層 6.7.2 Series resistance 串聯(lián)電阻 6.7.3 High–low junction 高低結(jié) 6.8 Summary 小結(jié) 6.9 Further Reading 延展閱讀 AT6.1 Validity of the depletion approximation 耗盡近似的有效性 AT6.2 Quasi-neutral region resistance in ideal diode 理想二極管中的準(zhǔn)中性區(qū)電阻 AT6.3 Equivalent circuit model for circuit design 電路設(shè)計中的等效電路模型 AT6.4 Switching characteristics of PN diode pn結(jié)二極管的開關(guān)特性 Problems 習(xí)題 7 Schottky Diode and Ohmic Contact 肖特基二極管和歐姆接觸 7.1 The Ideal Schottky Diode 理想肖特基二極管 7.2 Ideal Schottky Diode in Thermal Equilibrium 熱平衡下的理想肖特基二極管 7.2.1 A simpler system: a metal–metal junction 一個簡化系統(tǒng)：金屬–金屬結(jié) 7.2.2 Energy band lineup of metal–semiconductor junction 金屬–半導(dǎo)體結(jié)的能帶分布 7.2.3 Electrostatics of metal–semiconductor junction in equilibrium 平衡狀態(tài)下的金屬–半導(dǎo)體結(jié)靜電學(xué)特性 7.3 Current–Voltage Characteristics of Ideal Schottky Diode 理想肖特基二極管的電流–電壓特性 7.3.1 Electrostatics under bias 偏置電壓作用下的靜電學(xué)特性 7.3.2 I-V characteristics: qualitative discussion I-V 特性：定性討論 7.3.3 I-V characteristics: thermionic emission model I-V 特性：定量模型 7.4 Charge–Voltage Characteristics of Ideal Schottky Diode 理想肖特基二極管的電荷–電壓特性 7.5 Equivalent Circuit Models for the Ideal Schottky Diode 理想肖特基二極管的等效電路模型 7.6 Nonideal and Second-Order Effects 非理想條件和二階效應(yīng) 7.6.1 Series resistance 串聯(lián)電阻 7.6.2 Breakdown voltage 擊穿電壓 7.7 Integrated Schottky Diode 集成肖特基二極管 7.8 Ohmic Contacts 歐姆接觸 7.8.1 Lateral ohmic contact: transmission-line model 側(cè)向歐姆接觸：傳輸線模型 7.8.2 Boundary conditions imposed by ohmic contacts 歐姆接觸下的邊界條件 7.9 Summary 小結(jié) 7.10 Further Reading 延展閱讀 AT7.1 Nonideal Schottky barrier height of metal–semiconductor junctions 金屬–半導(dǎo)體結(jié)的非理想肖特基勢壘高度 AT7.2 Drift-diffusion model for I-V characteristics I-V 特性的漂移–擴散模型 AT7.3 Equivalent circuit model of Schottky diode for circuit design 電路設(shè)計中的肖特基二極管等效電路模型 AT7.4 Switching characteristics of Schottky diode 肖特基二極管的開關(guān)特性 Problems 習(xí)題 8 The Si Surface and the Metal-Oxide-Semiconductor Structure 硅表面和金屬-氧化物-半導(dǎo)體結(jié)構(gòu) 8.1 The Semiconductor Surface 半導(dǎo)體表面 8.2 The Ideal Metal–Oxide–Semiconductor Structure 理想的金屬–氧化物–半導(dǎo)體結(jié)構(gòu) 8.3 The Ideal Metal–Oxide–Semiconductor Structure at Zero Bias 零偏置下的理想金屬–氧化物–半導(dǎo)體結(jié)構(gòu) 8.3.1 General relations for the electrostatics of the ideal MOS structure 理想MOS結(jié)構(gòu)的一般靜電學(xué)特性 8.3.2 Electrostatic of the MOS structure under zero bias 零偏置下的MOS結(jié)構(gòu)靜電學(xué)特性 8.4 The Ideal Metal–Oxide–Semiconductor Structure Under Bias 偏置作用下的理想金屬–氧化物–半導(dǎo)體結(jié)構(gòu) 8.4.1 Depletion 耗盡 8.4.2 Flatband 平帶 8.4.3 Accumulation 積累 8.4.4 Threshold 閾值 8.4.5 Inversion 反轉(zhuǎn) 8.4.6 Summary of charge–voltage characteristics 電荷–電壓特性的小結(jié) 8.5 Dynamics of the MOS Structure MOS結(jié)構(gòu)的動力學(xué)特性 8.5.1 Quasi-static C-V characteristics 準(zhǔn)靜態(tài)C-V 特性 8.5.2 High-frequency C-V characteristics 高頻C-V 特性 8.5.3 Deep depletion 深耗盡態(tài) 8.6 Weak Inversion and the Subthreshold Regime 弱反轉(zhuǎn)和亞閾值區(qū) 8.7 Three-Terminal MOS Structure 三端口MOS結(jié)構(gòu) 8.8 Summary 小結(jié) 8.9 Further Reading 延展閱讀 AT8.1 Surface states 表面態(tài) AT8.2 Nonideal effects in MOS structure MOS結(jié)構(gòu)中的非理想條件 AT8.2.1 Oxide charge 氧化物電荷 AT8.2.2 Interface states 界面態(tài) AT8.3 Poisson–Boltzmann formulation of MOS electrostatics MOS靜電特性的泊松–玻爾茲曼公式 AT8.3.1 Approximations for depletion 耗盡近似 AT8.3.2 Approximations for accumulation 積累近似 AT8.3.3 Approximations for inversion 反轉(zhuǎn)近似 Problems 習(xí)題 9 The “ Long” Metal-Oxide-Semiconductor Field-Effect Transistor “長”金屬-氧化物-半導(dǎo)體場效應(yīng)晶體管 9.1 The Ideal MOSFET 理想的金屬–氧化物–半導(dǎo)體場效應(yīng)晶體管 9.2 Qualitative Operation of the Ideal MOSFET 理想MOSFET的定性運算 9.3 Inversion Layer Transport in the Ideal MOSFET 理想MOSFET反轉(zhuǎn)層的輸運特性 9.4 Current–Voltage Characteristics of the Ideal MOSFET 理想MOSFET的電流–電壓特性 9.4.1 The cut-off regime 截止模式 9.4.2 The linear regime 線性模式 9.4.3 The saturation regime 飽和模式 9.4.4 DC large-signal equivalent-circuit model of ideal MOSFET 直流大信號的等效電路模型 9.4.5 Energy band diagrams 能帶圖 9.5 Charge–Voltage Characteristics of the Ideal MOSFET 理想MOSFET的電荷–電壓特性 9.5.1 Depletion charge 耗盡電荷 9.5.2 Inversion charge 反轉(zhuǎn)電荷 9.6 Small-Signal Behavior of Ideal MOSFET 理想MOSFET的小信號特性 9.6.1 Small-signal equivalent circuit model of ideal MOSFET 小信號等效電路模型 9.6.2 Short-circuit current-gain cut-off frequency, fT, of idealMOSFET in saturation 飽和狀態(tài)下的短路“電流-增益”截止頻率fT 9.7 Nonideal Effects in MOSFET MOSFET中的非理想條件 9.7.1 Body effect 體效應(yīng) 9.7.2 Effect of back bias 反向偏置效應(yīng) 9.7.3 Channel-length modulation 溝道長度調(diào)制 9.7.4 The subthreshold regime 亞閾值模式 9.7.5 Source and drain resistance 源電阻和漏電阻 9.8 Summary 小結(jié) 9.9 Further Reading 延展閱讀 AT9.1 A More Detailed Study of Inversion Layer Transport 反轉(zhuǎn)層輸運的更詳細(xì)研究 AT9.1.1 The sheet-charge approximation 薄層電荷近似 AT9.1.2 The gradual-channel approximation 漸進(jìn)溝道近似 AT9.1.3 Validity of approximations 近似的有效性 Problems 習(xí)題 10 The “Short ” Metal-Oxide-Semiconductor Field-Effect Transistor “短”金屬-氧化物-半導(dǎo)體場效應(yīng)晶體管 10.1 MOSFET Short-Channel Effects: Transport MOSFET短溝道效應(yīng)：輸運 10.1.1 Mobility degradation 遷移率下降 10.1.2 Velocity saturation 速度飽和 10.2 MOSFET Short-Channel Effects: Electrostatics MOSFET短溝道效應(yīng)：靜電學(xué)特性 10.2.1 Threshold voltage dependence on gate length: VT rolloff 閾值電壓與柵極長度的關(guān)系：VT滾降 10.2.2 Threshold voltage dependence on VDS: drain-induced barrier lowering (DIBL) 閾值電壓與VDS的關(guān)系：漏極致勢壘降低 10.2.3 Subthreshold swing dependence on gate length and VDS 亞閾值波動與柵極長度和VDS的關(guān)系 10.3 MOSFET Short-Channel Effects: Gate Stack Scaling MOSFET短溝道效應(yīng)：柵堆疊縮尺效應(yīng) 10.3.1 Gate capacitance 柵電容 10.3.2 Gate leakage current 柵漏電流 10.4 MOSFET High-Field Effects MOSFET高場效應(yīng) 10.4.1 Electrostatics of velocity saturation region 速率飽和區(qū)的靜電學(xué)特性 10.4.2 Impact ionization and substrate current 碰撞電離和襯底電流 10.4.3 Output conductance 輸出電導(dǎo) 10.4.4 Gate-induced drain leakage 柵致漏極泄漏 10.5 MOSFET Scaling MOSFET縮尺理論 10.5.1 The MOSFET as a switch 用作開關(guān)的MOSFET 10.5.2 Constant field scaling of the ideal MOSFET 理想MOSFET的恒電場縮尺效應(yīng) 10.5.3 Constant voltage scaling of the ideal MOSFET 理想MOSFET的恒電壓縮尺效應(yīng) 10.5.4 Generalized scaling of short MOSFETs 短MOSFET的通用縮尺效應(yīng) 10.5.5 MOSFET scaling: a historical perspective MOSFET縮尺理論：歷史回顧 10.5.6 Evolution of MOSFET design MOSFET設(shè)計的演化 10.6 Summary 小結(jié) 10.7 Further Reading 延展閱讀 AT10.1 Electrostatics of Short MOSFET Around Threshold 閾值附近的短MOSFET的靜電學(xué)特性 AT10.2 Electrostatics of the Velocity Saturation Region 速率飽和區(qū)的靜電學(xué)特性 Problems 習(xí)題 11 The Bipolar Junction Transistor 雙極結(jié)型晶體管 11.1 The Ideal BJT 理想的雙極結(jié)型晶體管（BJT） 11.2 Current–Voltage Characteristics of the Ideal BJT 理想BJT的電流–電壓特性 11.2.1 The forward-active regime 正向有源模式 11.2.2 The reverse regime 反向模式 11.2.3 The cut-off regime 截止模式 11.2.4 The saturation regime 飽和模式 11.2.5 Output I–V characteristics 輸出I-V特性 11.3 Charge–Voltage Characteristics of Ideal BJT 理想BJT的電荷–電壓特性 11.3.1 Depletion charge 耗盡電荷 11.3.2 Minority carrier charge 少數(shù)載流子電荷 11.4 Small-Signal Behavior of the Ideal BJT in Forward-Active Regime 正向有源模式下理想BJT的小信號特性 11.4.1 Small-signal equivalent circuit model 小信號等效電路模型 11.4.2 Common-emitter short-circuit current-gain cut-off frequency, fT 共發(fā)射極的短路“電流–增益”截止頻率fT 11.5 Nonideal Effects in BJT BJT中的非理想條件 11.5.1 Base-width modulation 基區(qū)寬度調(diào)制 11.5.2 Emitter-base space-charge region recombination 射極–基極的空間電荷區(qū)復(fù)合 11.5.3 Impact ionization 碰撞電離 11.5.4 Breakdown voltage 擊穿電壓 11.5.5 High collector current effects 高集電極電流效應(yīng) 11.5.6 Parasitic resistance 寄生電阻 11.5.7 Nonuniform doping levels 非均勻摻雜水平 11.6 Evolution of BJT Design BJT設(shè)計的演化 11.7 Summary 小結(jié) 11.8 Further Reading 延展閱讀 AT11.1 Bipolar issues in MOSFETS MOSFET中的雙極問題 AT11.1.1 Latch-up 閂鎖效應(yīng) AT11.1.2 Floating-body effects in SOI MOSFETs SOI MOSFET中的浮體效應(yīng) AT11.1.3 MOSFET breakdown and snap-back MOSFET的擊穿和負(fù)阻 Problems 習(xí)題 A Table of Fundamental Physical Constants 基本物理常數(shù) B Table of Important Material Parameters of Si, GaAs, and SiO2 at 300 K Si，GaAs和SiO2在300 K時的重要材料參數(shù) C Table of Acronyms 縮略語 D Table of Taylor Series Expansions 泰勒級數(shù)展開式 E Analytical Expressions for Important Material Parameters of Si at 300 K Si在300 K時的重要材料參數(shù)的解析表達(dá)式 F Solutions to Selected Problems 部分習(xí)題參考答案 Index 索引